Direct SIMS Determination of the InxGa1-xN Mole Fraction


A. P. Kovarsky, Yu. L. Kretser, Yu A. Kudriavtsev, D. N. Stroganov, M. A. Yagovkina
Surface Diagnostics Lab., Mekhanobr-Analyt Co.

Tilman Beierlein , S. Strite
IBM Research Division, Zurich Research Laboratory

This article was received on Thursday, January 15, 1998 and accepted on Monday, July 27, 1998.

Abstract

We demonstrate that our secondary mass ion spectroscopy (SIMS) method for the determination of the mole fraction in solid InxGa1-xN solutions is accurate and reproduceable without need of reference samples. The method is based on measuring relative current values of CsM+ (M=Ga, In) secondary ions. The claim of reliable SIMS determination without reference samples was confirmed by four independent analytical methods on the same samples with a relative error in the InN mole fraction determination below 15%.

Outline

  • Introduction
  • Experimental
  • Samples
  • SIMS
  • X-ray Diffraction
  • Energy Dispersive X-ray Fluorescence Spectroscopy
  • Electron Probe Microanalysis
  • Secondary Neutral Mass Spectrometry
  • Results and Discussion
  • Conclusion
  • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 10(1998).

    last updated Thursday, July 30, 1998 3:39:10 PM.

    © 1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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