GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
P. Kung
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University
A. Saxler
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University
and
Air Force Research Laboratory, Materials Directorate, Wright-Patterson AFB
D. Walker, A. Rybaltowski, Xiaolong Zhang , J. Diaz, M. Razeghi
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University
This article was received on December 31, 1997 and
accepted on January 14, 1998. Abstract
We
report the growth, fabrication and characterization of GaInN/GaN multi-quantum
well lasers grown on (00·1) sapphire substrates by low pressure metalorganic
chemical vapor deposition. The threshold current density of a 1800 µm long
cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V.
These lasers exhibited series resistances of 13 and 14 
at 300 and 79 K,
respectively.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 1(1998).
last updated January 14, 1998 12:08:41 PM.© 1998 The Materials Research Society
