Volume 3

C. R. Abernathy, Editor in Chief

B. Monemar, Associate Editor in Chief

Published 1998. A keyword index and an author index are also available.

1. GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
P. Kung, A. Saxler, D. Walker, A. Rybaltowski, Xiaolong Zhang , J. Diaz, M. Razeghi.
2. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
Kay Domen , Reiko Soejima, Akito Kuramata , Toshiyuki Tanahashi.
3. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
Hugues Marchand , J.P. Ibbetson, Paul T. Fini , Peter Kozodoy , S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.
4. Effect of internal absorption on cathodoluminescence from GaN
Klaus Knobloch, Piotr Perlin , Joachim Krueger, Eicke R. Weber , Christian Kisielowski.
5. New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
Hyun Cho, J. Hong, T. Maeda, S.M. Donovan, J. Devin MacKenzie , Cammy R. Abernathy , S.J. Pearton, R. J. Shul, J. Han.
6. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
Zhonghai Yu , M.A.L. Johnson, T. Mcnulty, J.D. Brown, J.W. Cook,Jr, J.F. Schetzina.
7. Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
Subash Krishnankutty, Wei Yang, Thomas Nohava, P. Paul Ruden.
8. Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
S. Haffouz, B. Beaumont, Pierre Gibart .
9. Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
E. Monroy, F. Calle, E. Muñoz, F. Omnes, B. Beaumont, Pierre Gibart , J. A. Muñoz, F. Cusso.
10. Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
A. P. Kovarsky, Yu. L. Kretser, Yu A. Kudriavtsev, D. N. Stroganov, M. A. Yagovkina, Tilman Beierlein , S. Strite.
11. The Polarity of GaN: a Critical Review
E. S. Hellman.
12. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
A. R. Smith, V. Ramachandran, R. M. Feenstra, D. W. Greve, A. Ptak, T. Myers, W. Sarney, L. Salamanca-Riba, M. Shin, M. Skowronski.
13. Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.
14. Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
O. Zsebök, J.V. Thordson, T.G. Andersson.
15. The role of piezoelectric fields in GaN-based quantum wells
Andreas Hangleiter , Jin Seo Im, H. Kollmer, S. Heppel, J. Off, Ferdinand Scholz.
16. Suppression of phase separation in InGaN due to elastic strain
S. Yu. Karpov.
17. Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
A. R. A. Zauner, M. A. C. Devillers, P. R. Hageman, P. K. Larsen, S. Porowski.
18. Optical properties of electron-irradiated GaN
I. A. Buyanova, Mt. Wagner, W. M. Chen, L. Lindström, B. Monemar, H. Amano, I. Akasaki.
19. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
F. J. Sánchez, F. Calle, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, C. H. Molloy, D. J. Somerford, F. K. Koschnick, K. Michael, J.-M. Spaeth.
20. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz, Pierre Gibart .
21. Polarization and band offsets of stacking faults in AlN and GaN
J. A. Majewski, P. Vogl.
22. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
E. Kim, I. Berichev, A. Bensaoula, A. Schultz, K. Waters, W. Zagozdzon-Wosik.
23. High quality GaN films - growth and properties
K. Pakula, Jacek M. Baranowski , M. Leszczynski, B. Suchanek, M. Wojdak.
24. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
F. Calle, E. Monroy, F. J. Sánchez, E. Muñoz, B. Beaumont, S. Haffouz, M. Leroux, Pierre Gibart .
25. AMMONO method of BN, AlN and GaN synthesis and crystal growth.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, M. Palczewska, Andrzej Wysmolek , M. Kaminska.
26. Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .
27. Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.
28. Heterostructure for UV LEDs Based on Thick AlGaN Layers
A. V. Sakharov, W. V. Lundin, A. Usikov, U. I. Ushakov, Yu A. Kudriavtsev, A.V. Lunev, Y.M. Sherniakov, N.N. Ledentsov.
29. Optical Properties of GaNAs Grown by MBE
G. Pozina, I. G. Ivanov, B. Monemar, J.V. Thordson, T.G. Andersson.
30. Thermodynamic properties of group-III nitrides and related species
I. N. Przhevalskii, S. Yu. Karpov, Yu. N. Makarov.
31. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
Christian Wetzel, Shugo Nitta, Tetsuya Takeuchi, Shigeo Yamaguchi, H. Amano, I. Akasaki.
32. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
M. A. Sánchez-García, F. J. Sánchez, F. B. Naranjo, F. Calle, E. Calleja, E. Muñoz, U. Jahn, K. H. Ploog.
33. Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
A. M. Witowski, M. L. Sadowski, K. Pakula, B. Suchanek, R. Stepniewski, Jacek M. Baranowski , M. Potemski, G. Martinez, P. Wyder.
34. Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
K. Pakula, M. Wojdak, M. Palczewska, B. Suchanek, Jacek M. Baranowski .
35. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
Pawel Mackowiak, Wlodzimierz Nakwaski.
36. Properties of GaN epilayers grown on misoriented sapphire substrates
Carol Trager-Cowan , S. McArthur, P. G. Middleton, K. P. O'Donnell, D. Zubia, S. D. Hersee.
37. Schottky Diodes on MOCVD Grown AlGaN Films.
A. Y. Polyakov, N.B. Smirnov, A.V. Govorkov, D. W. Greve, M. Skowronski, M. Shin, Joan M. Redwing.
38. GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.
39. Pinholes, Dislocations and Strain Relaxation in InGaN
B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.
40. Localized Epitaxy of GaN by HVPE on patterned Substrates
O. Parillaud, V. Wagner, H. J. Buehlmann, Marc ILEGEMS .
41. 300°C GaN/AlGaN Heterojunction Bipolar Transistor
Fan Ren , Cammy R. Abernathy , J. M. Van Hove, P. P. Chow, R. Hickman, J. J. Klaassen, R. F. Kopf, Hyun Cho, K. B. Jung, J. R. La Roche, R. G. Wilson, J. Han, R. J. Shul, A. G. Baca, S.J. Pearton.
42. Macro- and microstrains in MOCVD-grown GaN
A. Usikov, V.V. Ratnikov, R. Kyutt, W. V. Lundin, B. Pushnyi, N. M. Shmidt, M.P. Scheglov.
43. Nucleation of AlN on the (7x7) Reconstructed Silicon (1 1 1) Surface
E. S. Hellman, D. N. E. Buchanan, C. H. Chen.
44. The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. Kovalev, F. Manyakhin.
45. Paramagnetic defects in GaN
M. Palczewska, B. Suchanek, R. Dwilinski, K. Pakula, A. Wagner, M. Kaminska.
46. X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
R. Langer, J Simon, O. Konovalov, N. Pelekanos, A. Barski, M. Leszczynski.
47. GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
Jolanta Prywer, S. Krukowski.
48. Native defects and carbon impurity in cubic BN
I. Gorczyca, A. Svane, N. E. Christensen.
49. Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique
A. N. Buzynin, V. V. Osiko, Yu. N. Buzynin, B. Pushnyi.
50. Current status of GaN crystal growth by sublimation sandwich technique
P. G. Baranov, E. N. Mokhov, A. O. Ostroumov, M. G. Ramm, M. S. Ramm, V. V. Ratnikov, A. D. Roenkov, Yu. A. Vodakov, A. A. Wolfson, G. V. Saparin, S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, Holger Juergensen.
51. Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
M. Godlewski, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski.
52. Raman study of resonance effects in Ga_1-xAl_xN solid solutions
F. Demangeot, J. Frandon, M. A. Renucci, H. Sands, D. Batchelder, S. Ruffenach-Clur, Olivier Briot, Bernard Gil.
53. Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
F. Manyakhin, A. Kovalev, A. E. Yunovich.
54. Phase Separation in wurtzite In_1-x-yGa_xAl_yN
T. Matsuoka.