High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in
Multiwafer Reactors
D. Schmitz, R. Beccard, O. Schoen, R. Niebuhr, B. Wachtendorf, Holger Juergensen
AIXTRON AG
This article was received on Thursday, June 12, 1997 and
accepted on Monday, July 7, 1997. Abstract
We present results on the growth of Al-Ga-In-N films in multiwafer
reactors with 7x2" wafer capacity. The design of these reactors
allows the combination of high efficiency (TMGa efficiency for GaN around 30%) and
excellent uniformity. Results on the growth of all materials from the
Al-Ga-In-Nitride family are presented in detail. GaN is grown with an excellent
optical quality and very good thickness uniformity below 2% across
2" wafers. The material quality is shown by electron mobility of
more than 500 cm2/Vs at an intentional Si-doping of approximately
1x1017 cm-3. Controlled acceptor doping with Mg yields
carrier concentrations between 5x1016 and 1018
cm-3. The layer thickness uniformity of the films are better than 2%
over a 2" wafer area. GaInN is grown with PL emission wavelengths
in the visible blue region showing a uniformity better than 1.5 nm standard
deviation. The film thickness uniformity represents the same figures as
obtained for the binary. The compositional uniformity of AlGaN is in the sub 1%
range corresponding to a wavelength variation below 1 nm.
The fabrication of heterostructures from these binary and ternary materials is
described as well as results from the characterization of these structures. The
results show that reliable and efficient production of Al-Ga-In-Nitride based
optoelectronic devices can be performed in multiwafer reactors.
Outline
Linked Pages
Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 9(1997).
last updated Saturday, July 24, 1999 6:35:59 PM.© 1997-1999 The Materials Research Society
