Surface Morphology and Structure of GaNxAs1-x
J.V. Thordson, O. Zsebök, U. Södervall, T.G. Andersson
University of Göteborg, Sweden
and
Chalmers University of Technology
This article was received on Monday, June 9, 1997 and
accepted on Wednesday, July 2, 1997. Abstract
GaNxAs1-x-layers were grown by solid
source molecular beam epitaxy using N2 and excitation by RF-plasma
source. The average nitrogen concentration, x, determined by secondary ion mass
spectrometry, ranges from isovalent nitrogen doping in GaAs up to GaN. X-ray
diffraction revealed two peaks, close to the ones for GaAs(002) and the
GaN(002) diffraction, respectively. The position of both peaks moved slightly
as a function of nitrogen content. Scanning electron microscopy indicated a
rough surface structure with improved smoothing for low and high nitrogen
compositions. The rough surface is partly due to crystallite formation when
mixing arsenic and nitrogen as a result of phase separation between the GaAs
and GaN. In ternary films with very high nitrogen composition there were
structural features with a different contrast. These were crystallites that
arose at the interface and grew up to the surface.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 8(1997).
last updated Monday, December 21, 1998 2:04:23 PM.© 1997-1998 The Materials Research Society
