Nonuniform Morphology and Luminescence Properties of a Molecular Beam
Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and
Cathodoluminescence
L.-L. Chao, G. S. Cargill III, C. Kothandaraman
Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University
D. Cyr, G. Flynn
Department of Chemistry, Columbia University
E. S. Hellman, D. Wiesmann, D. N. E. Buchanan, I. Brener
Bell Laboratories, Lucent Technologies
This article was received on December 30, 1996 and
accepted on May 23, 1997. Abstract
Complex faceted features of micrometer sizes and with intense
luminescence rise 200-300 nm above the surface of a GaN thin film grown by
molecular beam epitaxy on (0001) sapphire. Cathodoluminescence measurements at
room temperature and at 8K were used to investigate the luminescence properties
of these microfeatures in comparison with those of the background GaN material.
The morphology of the micro-features was studied by scanning electron
microscopy and by atomic force microscopy.
