Characteristics Of Room Temperature-CW Operated InGaN
Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura
Nichia Chemical Industries
This invited article was received on Wednesday, March 5, 1997 and
accepted on Tuesday, March 11, 1997. Abstract
The continuous-wave (CW) operation of InGaN
multi-quantum-well-structure laser diodes (LDs) was demonstrated at room
temperature (RT) with a lifetime of 35 hours. The threshold current and the
voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current
density was 3.6 kA/cm2. When the temperature of the LDs was varied,
large mode hopping of the emission wavelength was observed. The carrier
lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2
x 1020/cm3, respectively. From the measurements of gain
spectra and an external differential quantum efficiency dependence on the
cavity length, the differential gain coefficient, the transparent carrier
density, threshold gain and internal loss were estimated to be 5.8x10-17
cm2, 9.3x1019 cm-3, 5200 cm-1
and 43 cm-1, respectively. Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 5(1997).
last updated Sunday, December 20, 1998 3:35:19 PM.© 1997-1998 The Materials Research Society
