Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy


M. Meyyappan
NASA Ames Research Center

This article was received on November 25, 1997 and accepted on December 11, 1997.

Abstract

A simple analysis is provided to determine the characteristics of an electron cyclotron resonance (ECR) plasma source for the generation of active nitrogen species in the molecular beam epitaxy of III-V nitrides. The effects of reactor geometry, pressure, power, and flow rate on the dissociation efficiency and ion flux are presented. Pulsing the input power is proposed to reduce the ion flux.

Outline

  • Introduction
  • Analysis
  • ECR nitrogen discharge characteristics
  • Pulsed-power nitrogen discharge
  • Concluding Remarks
  • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 46(1997).

    last updated December 11, 1997 2:09:17 PM.

    © 1997 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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