GaN based LED's with different recombination zones
M. Schauler, C. Kirchner, M. Mayer, A. Pelzmann, F. Eberhard, Markus Kamp , Peter Unger, K. J. Ebeling
Abteilung Optoelektronik, Universität Ulm
This article was received on Sunday, June 15, 1997 and
accepted on Wednesday, October 8, 1997. Abstract
GaN based homo- and heterotype LED's have been fabricated and characterized which emit in the blue and ultra-violet part of the spectral range. Complete epitaxial LED layer sequences with different recombination zones have been grown using MOVPE as well as MBE. Subsequent to the material growth, chemically-assisted ion-beam etching and contact metallization are utilized to achieve full LED devices. MBE-grown homotype LED's reveal a peak in the output light spectrum at a wavelength of 372 nm with a linewidth being as narrow as 12 nm. GaN/InGaN LED's grown by MOVPE show visible single peak emission with linewidths of 23 nm. The optical output power as measured in a calibrated Ulbricht sphere is in the 1 µW regime. 
