Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
M.P. Mack
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara
and
Wright Laboratories (WL/AADD)
A. Abare, M. Aizcorbe, Peter Kozodoy , S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara
This article was received on Tuesday, September 16, 1997 and
accepted on Wednesday, September 17, 1997. Abstract
Room temperature (RT) pulsed operation of blue (420 nm) nitride based
multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with
lifetimes exceeding 6 hours have been demonstrated. Threshold current densities
as low as 12.7 kA/cm