Raman study of Ga1-xAlxN solid solutions
F. Demangeot, J. Groenen, J. Frandon, M. A. Renucci
Laboratoire de Physique des Solides de Toulouse, Universite Paul Sabatier
Olivier Briot, S. Ruffenach-Clur, Roger-Louis Aulombard
Groupe d'Etude des Semiconducteurs, GES-CNRS
This article was received on July 18, 1997 and
accepted on September 17, 1997. Abstract
Long wavelength optical phonons of
AlxGa1-xN solid solutions have been
identified in the whole compositional range by Raman spectroscopy. The
frequencies of A1 and E1 polar phonons
increase continuously with x from one-member crystal to the other. A
generalization of the dielectric model of Hon and Faust is used to treat the
coupling of the longitudinal optic (LO) mode. This approach accounts for the
observed frequencies and confirms the so-called one-mode behaviour of polar LO
phonons. Moreover,a signature of the coupling of a discrete mode (tentatively
associated to silent q=0 B1 mode) with an unidentified
continuum has been obtained.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 40(1997).
last updated October 17, 1997 5:26:59 PM.© 1997 The Materials Research Society
