Raman study of Ga1-xAlxN solid solutions


F. Demangeot, J. Groenen, J. Frandon, M. A. Renucci
Laboratoire de Physique des Solides de Toulouse, Universite Paul Sabatier

Olivier Briot, S. Ruffenach-Clur, Roger-Louis Aulombard
Groupe d'Etude des Semiconducteurs, GES-CNRS

This article was received on July 18, 1997 and accepted on September 17, 1997.

Abstract

Long wavelength optical phonons of AlxGa1-xN solid solutions have been identified in the whole compositional range by Raman spectroscopy. The frequencies of A1 and E1 polar phonons increase continuously with x from one-member crystal to the other. A generalization of the dielectric model of Hon and Faust is used to treat the coupling of the longitudinal optic (LO) mode. This approach accounts for the observed frequencies and confirms the so-called one-mode behaviour of polar LO phonons. Moreover,a signature of the coupling of a discrete mode (tentatively associated to silent q=0 B1 mode) with an unidentified continuum has been obtained.

Outline

  • Introduction
  • Samples and experiments
  • Experimental results
  • Presentation of the model
  • Comparison of the calculated results with the experimental data
  • Summary
  • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 40(1997).

    last updated October 17, 1997 5:26:59 PM.

    © 1997 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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