Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure


A. Pelzmann
Abteilung Optoelektronik, Universität Ulm

S. Strite
IBM Research Division, Zurich Research Laboratory

A. Dommann
Neu-Technikum Buchs

C. Kirchner, Markus Kamp , K. J. Ebeling
Abteilung Optoelektronik, Universität Ulm

A. Nazzal
IBM Almaden Research Center, 650 Harry Road, San Jose CA 95120-6099 USA

This article was received on December 30, 1996 and accepted on January 24, 1997.

Abstract

We investigated the properties of ion-implanted GaN:Zn annealed under various conditions using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD). Epitaxial GaN/sapphire of high optical quality was ion-implanted with a 1013 cm-2 dose of Zn+ ions at 200 keV. The sample was capped with 200 Å of SiNx and then diced into numerous pieces which were annealed under varied conditions in an attempt to optically activate the Zn. Annealing was performed in a tube furnace under flowing N2, an atmospheric pressure MOCVD reactor under flowing NH3 or N2, and under an N2 overpressure of 190 atm. The observed improvement in the optical quality of GaN:Zn annealed under N2 overpressure yields further insights into the trade-off between defect annealing and N loss from the GaN crystal.

Outline

  • Introduction
  • Purpose of the Investigation
  • Background
  • Present Study
  • Experiment
  • Initial Material
  • Ion-Implantation
  • Annealing
  • Photoluminescence
  • High Resolution X-ray Diffractometry
  • 77 K Photoluminescence
  • High Pressure Annealed Samples
  • Atmospheric Pressure Annealed Samples
  • High Resolution X-ray Diffractometry Data
  • X-Ray Rocking Curves
  • Reciprocal Space Mapping
  • Discussion
  • Conclusion
  • Acknowledgments

    • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 4(1997).

    last updated October 21, 1997 3:52:47 PM.

    © 1997 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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