Physical Properties of Bulk GaN Crystals Grown by HVPE
Yu.V. Melnik
PhysTech WBG Research Group, Ioffe Institute
and
Crystal Growth Research Center
K.V. Vassilevski, I.P. Nikitina, A.I. Babanin
PhysTech WBG Research Group, Ioffe Institute
V. Yu. Davydov
Ioffe Physical-Technical Institute
V.A. Dmitriev
PhysTech WBG Research Group, Ioffe Institute
and
Materials Science Research Center of Excellence, School of Engineering, Howard University
This article was received on Wednesday, June 11, 1997 and
accepted on Wednesday, September 17, 1997. Abstract
Free standing GaN platelets were fabricated by hydride vapor
phase epitaxy (HVPE). The platelets having a current maximum size of 7x6x0.1
mm3 were obtained by HVPE growth of ~100 µm thick GaN layers on
SiC substrates and subsequent removal of the substrates by reactive ion etching
(RIE). Surface of the GaN platelets was characterized by reflectance high
energy election diffraction (RHEED), and Auger electron spectroscopy (AES).
Crystal structure and optical properties of the platelets were studied by x-ray
diffraction and photoluminescence (PL), respectively. Raman spectroscopy was
also applied for material characterization. Residual strain was detected in
the crystals. The stress was eliminated by high temperature anneal.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 39(1997).
last updated Saturday, December 18, 1999 9:47:13 PM.© 1997-1999 The Materials Research Society
