Electron Beam Pumped MQW InGaN/GaN Laser
V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov
P.N. Lebedev Physical Institute
A. Abare, M.P. Mack, S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara
Michael D. Tiberi , T. George
Principia Optics, Inc.
This article was received on and
accepted on September 17, 1997. Abstract
E-beam
pumped lasers are attractive for Laser Cathode Ray Tubes (LCRT) in projection
displays and a variety of applications typically associated with optically
pumped lasers. For the first time an InGaN/GaN multiple quantum well (MQW)
in-plane laser pumped by surface normal pulse and scanning electron beams was
demonstrated. Pumping at room temperature (RT) and 80 K showed peak stimulated
emission wavelengths of 402 and 409 nm with a full width half maximum (FWHM) of
0.6 nm and 1.2 nm, respectively. The threshold electron beam current densities
have been estimated as 60 A/cm2 for 35 keV electron energy at 80 K
using scanning e-beam pumping and 200-300 A/cm2 at RT using pulsed
e-beam pumping with a maximum electron energy of 150 keV. At 80 K, light
output of 150 mW was measured out of one facet at an e-beam current of 1.7
mA.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 38(1997).
last updated October 17, 1997 5:59:30 PM.© 1997 The Materials Research Society
