Temperature behaviour of the yellow emission in GaN
R. Seitz, C. Gaspar, T. Monteiro, E. Pereira
Departamento de Física, Universidade de Aveiro
M. Leroux, B. Beaumont, Pierre Gibart
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CRHEA-CNRS
This article was received on July 16, 1997 and
accepted on September 15, 1997. Abstract
Even in good quality undoped GaN samples, as assessed by the
intense excitonic emission, the yellow band is present. This band has been
attributed either to a shallow donor to deep double donor pair recombination
[1], to a deep donor to a shallow acceptor [2] or to a shallow donor and a deep
state [3]. However, its origin is not yet clear. We present data on time
resolved spectroscopy compared with steady state results. These results
indicate that there is no difference in band shape between steady state and
time resolved spectra at all temperatures. However, in some samples there is an
increase in intensity of the yellow band. It is concluded that besides a fast
emission, due to prompt excitation of the centre, an indirect path from a trap
13.7 meV below the shallow donor is responsible for the long component of the
decay and the intensity increase. An emission with a lifetime of ca. 300 ms is
also present with a maximum at 2.35 eV.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 36(1997).
last updated October 17, 1997 4:58:03 PM.© 1997 The Materials Research Society
