Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
M. A. Sánchez-García, E. Calleja, E. Monroy, F. J. Sánchez, F. Calle, E. Muñoz
Dpt. Ingeniería Electrónica, E.T.S.I. Telecomunicación, Politécnica, Ciudad Universitaria
A.Sanz. Hervas, C. Villar, M. Aguilar
Dpto Tecn. Electronica, ETSIT. Univ, Politecnica Madrid
This article was received on Wednesday, June 11, 1997 and
accepted on Monday, September 15, 1997. Abstract
High quality AlN layers with full widths at half maximum values of 10
arcmin and average surface roughness (rms) of 48Å were grown by molecular
beam epitaxy on Si(111) substrates. A systematic study and optimization of the
growth conditions was performed in order to use these AlN layers as buffers in
the growth of GaN films. Atomic force microscopy (AFM) and X-ray diffraction
(XRD) techniques were employed to determine the surface and structural quality
of the layers. Best AlN films were obtained at high substrate temperatures
(T
