MIJ-NSR Vol. 2, Art. 3, E. V. Kalashnikov and V. I. Nikolaev

Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals

E. V. Kalashnikov
Institute of Mechanical Engineering, RAN

V. I. Nikolaev
Ioffe Physical-Technical Institute

This article was received on May 31, 1996 and accepted on January 24, 1997.

Abstract

The virtual crystal approximation has been used to determine the temperature-composition dependence of the GaN-AlN, GaN-InN, and InN-AlN band gap energies. Also, the thermodynamic instability states in the mixed crystals were studied. The expression for the band gap of mixed A-B crystals has been derived: E_g^AB = (1-x)E_g^A + xE_g^B - bS_xx , where E_g^A and E_g^B are the direct gaps for compounds A and B, respectively, and x is the alloy concentration. The term S_xx ~ T₀/(

²G/

x²) where G is the thermodynamic potential of the mixed crystal, b is a bowing parameter, and T₀ has the meaning of a growth temperature.

Outline

Introduction

Correction of the Compositional Dependence of the Band Gap

Noncomplanar Space Periodical Structures

Temperature-Composition Dependencies of the Band Gap in Semiconductor Nitrides

Conclusion

Acknowledgments

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 3(1997).

last updated October 21, 1997 3:37:05 PM.