Yellow luminescence in Mg-doped GaN
F. J. Sánchez, F. Calle, D. Basak, J. M. G. Tijero, M. A. Sánchez-García, E. Monroy, E. Calleja, E. Muñoz
Dpt. Ingeniería Electrónica, E.T.S.I. Telecomunicación, Politécnica, Ciudad Universitaria
B. Beaumont, Pierre Gibart
Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CRHEA-CNRS
J.J. Serrano, J.M. Blanco
Dpt. Ingeniería Electrónica, E.T.S.I. Telecomunicación, Politécnica, Ciudad Universitaria
This article was received on Wednesday, June 11, 1997 and
accepted on Friday, September 12, 1997. Abstract
Optical thresholds, that correspond to a level located at 1 eV above
the valence band, are observed by photocapacitance techniques in n-type
Mg-doped GaN. In undoped GaN, this level has been previously related to the
yellow emission detected by photoluminescence. In Mg-doped GaN, this yellow
luminescence is only observed for excitation energies below the Mg-related band
(2.9 - 3 eV). This result evidences that Mg-doping may reduce but not avoid the
formation of the yellow band related defects in n-type and semiinsulating
Mg-doped samples. The fact that the yellow luminescence is not observed for
excitation energies above the bandgap may be justified by a higher efficiency
of the Mg-related recombination path.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 28(1997).
last updated Sunday, December 20, 1998 5:22:16 PM.© 1997-1998 The Materials Research Society
