MOVPE Growth and Structural Characterization of AlxGa1-xN


S. Ruffenach-Clur, Olivier Briot, Bernard Gil, Roger-Louis Aulombard
Groupe d'Etude des Semiconducteurs, GES-CNRS

J. L. Rouviere
CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée/SP2M

This article was received on June 9, 1997 and accepted on September 12, 1997.

Abstract

The ternary alloy GaAlN has been grown by low pressure MOVPE (76 Torr) using triethylgallium, trimetylaluminum and ammonia as precursors. The alloy layers were grown on (0001) sapphire substrates using a low temperature AlN buffer. All layers were deposited at a growth temperature of 980°C. Only the aluminum/gallium ratio in the gas phase was changed, keeping the total group III molar flow rate and V/III molar ratio constant.

The aluminum incorporation versus gas phase composition was determined experimentally, using energy dispersive analysis of X-rays (EDAX), and X-ray diffraction. We propose a model, taking into account kinetically limited mass transport of group III species in the gas phase, which describes well the data.

The structural quality of the layers was investigated using X-ray diffraction and TEM experiments.

A degradation of the materials quality is observed with increasing Al content. In this case, growth originate on the buffer grains facets resulting in a " two directional " growth. This phenomenon, being markedly enhanced when increasing the Al content will be detailed in this paper.

Outline

  • Introduction
  • Experimental
  • Results and Discussion
  • Conclusion
  • Acknowledgments

    • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 27(1997).

    last updated October 16, 1997 1:35:12 PM.

    © 1997 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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