Properties of the Biexciton and the Electron-Hole-Plasma in Highly
Excited GaN
J.-Chr. Holst, L. Eckey, A. Hoffmann, I. Broser
Institut fuer Festkoeperphysik, Technische Universitaet Berlin
H. Amano, I. Akasaki
Department of Electrical and Electronic Engineering, Meijo University
This article was received on June 23, 1997 and
accepted on September 10, 1997. Abstract
High-excitation processes like biexciton decay and recombination of
an electron-hole-plasma are discussed as efficient mechanisms for lasing in
blue laser diodes [1]. Therefore, the investigation of these processes is of
fundamental importance to the understanding of the properties of GaN as a basic
material for optoelectronical applications. We report on comprehensive
photoluminescence and gain measurements of highly excited GaN epilayers grown
by metal-organic chemical vapor deposition (MOCVD) over a wide range of
excitation densities and temperatures. For low temperatures the decay of
biexcitons and the electron-hole-plasma dominate the spontaneous-emission and
gain spectra. A spectral analysis of the lineshape of these emissions is
performed and the properties of the biexciton and the electron-hole-plasma in
GaN will be disscused in comparison to other wide-gap materials. At increased
temperatures up to 300 K exciton-exciton-scattering and band-to-band
recombination are the most efficient processes in the gain spectra beside the
electron-hole-plasma.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 25(1997).
last updated October 16, 1997 12:46:05 PM.© 1997 The Materials Research Society
