Transient four wave mixing experiments on GaN
R. Zimmermann, M. Hofmann, D. Weber, J. Möbius, A. Euteneuer, W. W. Rühle
Fachbereich Physik und Zentrum für Materialwissenschaften, Marburg, Germany
E. O. Göbel
Physikalisch-Technische Bundesanstalt, Braunschweig, Germany
B.K. Meyer
I. Physics Institute, Justus-Liebig-University Giessen
H. Amano, I. Akasaki
Department of Electrical and Electronic Engineering, Meijo University
This article was received on June 10, 1997 and
accepted on September 8, 1997. Abstract
We present four wave mixing experiments on GaN. We find an intrinsic homogeneous broadening of the A-exciton of 1.67 meV. A pronounced beating with a period of 0.52 ps is observed at excitation energies between the A- and the B-exciton and corresponds to an energy splitting of 7.98 meV of A- and B-exciton. Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 24(1997).
last updated October 16, 1997 12:26:40 PM.© 1997 The Materials Research Society
