AlGaN-Based Bragg Reflectors


O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg
Walter Schottky Institut, Technische Universität München

N. Esser, T. Wethkamp, K. Wilmers, W. Richter
Institut fuer Festkoeperphysik, Technische Universitaet Berlin

M. Stutzmann
Walter Schottky Institut, Technische Universität München

This article was received on Wednesday, June 11, 1997 and accepted on Thursday, August 28, 1997.

Abstract

We have studied the dependence of the absorption edge and the refractive index of wurtzite AlxGa1-xN films on composition using transmission, ellipsometry and photothermal deflection spectroscopy. The Al molar fraction of the AlxGa1-xN films grown by plasma-induced molecular beam epitaxy was varied through the entire range of composition (0 <= x <= 1). We determined the absorption edges of AlxGa1-xN films and a bowing parameter of 1.3 ± 0.2 eV. The refractive index below the bandgap was deduced from the interference fringes, the dielectric function between 2.5 and 25 eV from ellipsometry measurements. The measured absorption coefficients and refractive indices were used to calculate the design and reflectivity of AlGaN-based Bragg reflectors working in the blue and near-ultraviolet spectral region.

Outline

  • Introduction
  • Experiments
  • Results and Discussion
  • Dependence of the Absorption Edge on the Al molar Fraction
  • Index of refraction
  • AlGaN-based Bragg Reflectors
  • Conclusion
  • Acknowledgments
  • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 22(1997).

    last updated Friday, October 16, 1998 5:59:07 PM.

    © 1997-1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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