O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg
Walter Schottky Institut, Technische Universität München
N. Esser, T. Wethkamp, K. Wilmers, W. Richter
Institut fuer Festkoeperphysik, Technische Universitaet Berlin
M. Stutzmann
Walter Schottky Institut, Technische Universität München
We have studied the dependence of the absorption edge and the
refractive index of wurtzite AlxGa1-xN films on
composition using transmission, ellipsometry and photothermal deflection
spectroscopy. The Al molar fraction of the AlxGa1-xN
films grown by plasma-induced molecular beam epitaxy was varied through the
entire range of composition (0
x
1). We
determined the absorption edges of AlxGa1-xN films and a
bowing parameter of 1.3 ± 0.2 eV. The refractive index below the
bandgap was deduced from the interference fringes, the dielectric function
between 2.5 and 25 eV from ellipsometry measurements. The measured absorption
coefficients and refractive indices were used to calculate the design and
reflectivity of AlGaN-based Bragg reflectors working in the blue and
near-ultraviolet spectral region.