MIJ-NSR Vol. 2, Art. 19, J. I. Pankove

A Perspective on the GaN Injection Laser

This article was received on Monday, August 4, 1997 and accepted on Wednesday, August 20, 1997.

Abstract

This short paper is a brief review of the problems to be overcome for making an injection laser using a new semiconductor that promises to revolutionize the information storage industry.

Outline

Memories of the Early Days of Semiconductor Electroluminescence

GaN-based Lasers

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 19(1997).

last updated Monday, December 28, 1998 12:19:39 PM.