MOVPE growth optimization of high quality InGaN films.
W. Van der Stricht, I. Moerman, P. Demeester
University of Ghent-IMEC, Department of Information Technology
L. Considine, E. J. Thrush, J. A. Crawley
Thomas Swan & Co., Ltd.
This article was received on June 5, 1997 and
accepted on August 6, 1997. Abstract
In this paper growth of high quality InGaN films on (0001) sapphire
substrates by atmospheric pressure organometallic vapour phase epitaxy in a
vertical rotating disk reactor is investigated. The InGaN layers grown above
800 °C are transparent and show no In-droplets on the surface. The
In-content varies between 56 and 9 % for growth temperatures between 700 and
850 °C. The DC X-ray rocking curve of InGaN typically shows a FWHM
between 8 and 15 arcmin. Room temperature PL shows an intense band edge
emission with a FWHM between 100 and 200 meV for an In-content of 9 and 56 %.
The initial efforts on QW growth are discussed.
