Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
T. S. Cheng, C. T. Foxon, N. J. Jeffs
Department of Physics, University of Nottingham
D. J. Dewsnip, L. Flannery, J. W. Orton
Department of Electrical and Electronic Engineering, University of Nottingham
S. V. Novikov, B. Ya Ber, Yu A. Kudriavtsev
Ioffe Physical-Technical Institute
This article was received on Tuesday, June 3, 1997 and
accepted on Tuesday, July 22, 1997. Abstract
This paper discusses the growth of Mg-doped GaN samples using
a modified Molecular Beam Epitaxy (MBE) method. Our results suggest that the
dopant is incorporated from a surface population maintained by the incident Mg
flux by a rapid diffusion mechanism. It follows that the chemical
concentration will increase with time of growth and that the p-doping level
will also increase progressively with film thickness for a given Mg flux.
Increasing the Mg flux to the surface results at first in a higher doping
density, but this saturates when the Mg surface concentration reaches a finite
value.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 13(1997).
last updated Wednesday, December 8, 2004 1:31:05 PM.© 1997-2004 The Materials Research Society
