MIJ-NSR Vol. 2, Art. 11, F. Manyakhin et al.

Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures

F. Manyakhin, A. Kovalev
Moscow Institute of Steel and Alloys

V. E. Kudryashov, A. N. Turkin, A. E. Yunovich
Moscow State Lomonosov University

This article was received on Thursday, June 5, 1997 and accepted on Thursday, July 10, 1997.

Abstract

Luminescence spectra of InGaN/AlGaN/GaN p-n-heterostructures were studied at reverse bias sufficient for impact ionization. There is a high electric field in the active InGaN-layer, and the tunnel component of the current dominates at the low reverse bias. Avalanche breakdown begins at |V_th|> 8÷10 V, i.e.

3 E_g/e. Radiation spectra have a short wavelength edge 3.40 eV, and maxima in the range 2.60÷2.80 eV corresponding to the injection spectra. Mechanisms of the hot plasma recombination in p-n-heterojunctions are discussed.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 11(1997).

last updated Sunday, December 20, 1998 2:27:48 AM.