Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
C. Guénaud, E. Deleporte, M. Voos, C. Delalande
Laboratoire de Physique de la Matière
Condensée, École Normale Superièure, Paris, France
B. Beaumont, M. Leroux, Pierre Gibart , J. P. Faurie
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CRHEA-CNRS
This article was received on June 10, 1997 and
accepted on July 9, 1997. Abstract
We report on photoluminescence and photoluminescence
excitation experiments performed on hexagonal GaN layers grown on a Sapphire
substrate. Information about extrinsic and intrinsic optical properties have
been obtained. We show that, at low temperature, the fundamental A excitons are
preferentially involved in the relaxation towards the neutral donor bound
exciton photoluminescence line, while electron-hole pairs rather participate in
the relaxation towards D
