Gain Spectroscopy of HVPE-Grown GaN
L. Eckey, J.-Chr. Holst, A. Hoffmann, I. Broser
Institut fuer Festkoeperphysik, Technische Universitaet Berlin
T. Detchprohm, K. Hiramatsu
Department of Electronics, School of Engineering, Nagoya University
This article was received on June 2, 1996 and
accepted on January 13, 1997. Abstract
We report on photoluminescence and optical gain measurements of
highly excited GaN crystals grown by hydride vapor physe epitaxy (HVPE).
Inelastic scattering processes of excitons dominate the spontaneous emission
spectrum under high excitation up to temperatures of 180 K. Towards room
temperature phonon-assisted recombination of excitons and free carriers begins
to dominate the spectrum. Similar characteristics are observed in
temperature-dependent gain measurements.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 2, 1(1997).
last updated October 21, 1997 4:26:14 PM.© 1997 The Materials Research Society
