Volume 2

S. Strite, Co-Editor in Chief

C. R. Abernathy, Co-Editor in Chief

Published 1997. A keyword index and an author index are also available.

1. Gain Spectroscopy of HVPE-Grown GaN
L. Eckey, J.-Chr. Holst, A. Hoffmann, I. Broser, T. Detchprohm, K. Hiramatsu.
2. Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
Holger Cordes , Y. A. Chang.
3. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
E. V. Kalashnikov, V. I. Nikolaev.
4. Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
A. Pelzmann, S. Strite, A. Dommann, C. Kirchner, Markus Kamp , K. J. Ebeling, A. Nazzal.
5. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura .
6. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki.
7. Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
L.-L. Chao, G. S. Cargill III, C. Kothandaraman, D. Cyr, G. Flynn, E. S. Hellman, D. Wiesmann, D. N. E. Buchanan, I. Brener.
8. Surface Morphology and Structure of GaN_xAs_1-x
J.V. Thordson, O. Zsebök, U. Södervall, T.G. Andersson.
9. High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
D. Schmitz, R. Beccard, O. Schoen, R. Niebuhr, B. Wachtendorf, Holger Juergensen .
10. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
C. Guénaud, E. Deleporte, M. Voos, C. Delalande, B. Beaumont, M. Leroux, Pierre Gibart , J. P. Faurie.
11. Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures
F. Manyakhin, A. Kovalev, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich.
12. Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
E. Monroy, J. A. Garrido, E. Muñoz, I. Izpura, F. J. Sánchez, M. A. Sánchez-García, E. Calleja, B. Beaumont, Pierre Gibart .
13. Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
T. S. Cheng, C. T. Foxon, N. J. Jeffs, D. J. Dewsnip, L. Flannery, J. W. Orton, S. V. Novikov, B. Ya Ber, Yu A. Kudriavtsev.
14. GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter , A. Dörnen, Ferdinand Scholz, D. Brunner, O. Ambacher, H. Lakner.
15. Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
S. Strite, A. Pelzmann, T. Suski, M. Leszczynski, J. Jun, A. Rockett, Markus Kamp , K. J. Ebeling.
16. MOVPE growth optimization of high quality InGaN films.
W. Van der Stricht, I. Moerman, P. Demeester, L. Considine, E. J. Thrush, J. A. Crawley.
17. High Frequency AlGaN/GaN MODFET's
L. Eastman, K. Chu, W. Schaff, M. Murphy, N Weimann, T. Eustis.
18. Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
I. Gorczyca, A. Svane, N. E. Christensen.
19. A Perspective on the GaN Injection Laser
J. I. Pankove.
20. Evidence of 2D-3D transition during the first stages of GaN growth on AlN
F. Widmann, B. Daudin, G. Feuillet, Y. Samson, M. Arlery, J. L. Rouviere.
21. Optical nonlinearities of Gallium Nitride
H. Haag, P. Gilliot, D. Ohlmann, R. Levy, Olivier Briot, Roger-Louis Aulombard.
22. AlGaN-Based Bragg Reflectors
O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp, K. Wilmers, W. Richter, M. Stutzmann.
23. XPS study of Au/GaN and Pt/GaN contacts
R. Sporken, C. Silien, F. Malengreau, K Grigorov, R. Caudano, F. J. Sánchez, E. Calleja, E. Muñoz, B. Beaumont, Pierre Gibart .
24. Transient four wave mixing experiments on GaN
R. Zimmermann, M. Hofmann, D. Weber, J. Möbius, A. Euteneuer, W. W. Rühle, E. O. Göbel, B.K. Meyer, H. Amano, I. Akasaki.
25. Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
J.-Chr. Holst, L. Eckey, A. Hoffmann, I. Broser, H. Amano, I. Akasaki.
26. Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
Markus Kamp , M. Mayer, A. Pelzmann, K. J. Ebeling.
27. MOVPE Growth and Structural Characterization of Al_xGa_1-xN
S. Ruffenach-Clur, Olivier Briot, Bernard Gil, Roger-Louis Aulombard, J. L. Rouviere.
28. Yellow luminescence in Mg-doped GaN
F. J. Sánchez, F. Calle, D. Basak, J. M. G. Tijero, M. A. Sánchez-García, E. Monroy, E. Calleja, E. Muñoz, B. Beaumont, Pierre Gibart , J.J. Serrano, J.M. Blanco.
29. Properties of InGaN deposited on Glass at Low Temperature
Tilman Beierlein , S. Strite, A. Dommann, D. J. Smith.
30. Epitaxial Growth and Orientation of GaN on (1 0 0) -LiAlO2
E. S. Hellman, Z. Liliental-Weber, D. N. E. Buchanan.
31. Comparison of Luminescence and Physical Morphologies of GaN Epilayers
Carol Trager-Cowan , P. G. Middleton, K. P. O'Donnell, S. Ruffenach-Clur, Olivier Briot.
32. Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
J. Allègre, P. Lefebvre, J. Camassel, B. Beaumont, Pierre Gibart .
33. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
M. A. Sánchez-García, E. Calleja, E. Monroy, F. J. Sánchez, F. Calle, E. Muñoz, A.Sanz. Hervas, C. Villar, M. Aguilar.
34. Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
J. Allègre, P. Lefebvre, S. Juillaguet, W. Knap, J. Camassel, Q. Chen, M. A. Khan.
35. Theoretical Studies Of Hydrogen Passivated Substitutional Magnesium Acceptor In Wurzite GaN
V. J. B. Torres, S. Öberg, R. Jones.
36. Temperature behaviour of the yellow emission in GaN
R. Seitz, C. Gaspar, T. Monteiro, E. Pereira, M. Leroux, B. Beaumont, Pierre Gibart .
37. p-doping of GaN by MOVPE
S. Haffouz, B. Beaumont, M. Leroux, M. Laugt, P. Lorenzini, Pierre Gibart , L.G.Hubert-Pfalzgraf.
38. Electron Beam Pumped MQW InGaN/GaN Laser
V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov, A. Abare, M.P. Mack, S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars , Michael D. Tiberi , T. George.
39. Physical Properties of Bulk GaN Crystals Grown by HVPE
Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.
40. Raman study of Ga_1-xAl_xN solid solutions
F. Demangeot, J. Groenen, J. Frandon, M. A. Renucci, Olivier Briot, S. Ruffenach-Clur, Roger-Louis Aulombard.
41. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
M.P. Mack, A. Abare, M. Aizcorbe, Peter Kozodoy , S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars .
42. Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
P. Ruterana, Philippe Vermaut , G. Nouet, A. Salvador, H. Morkoç.
43. Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
A. Cros, H. Angerer, R. Handschuh, O. Ambacher, M. Stutzmann.
44. GaN based LED's with different recombination zones
M. Schauler, C. Kirchner, M. Mayer, A. Pelzmann, F. Eberhard, Markus Kamp , P. Unger, K. J. Ebeling.
45. The role of gaseous species in group-III nitride growth
S. Yu. Karpov, Yu. N. Makarov, M. S. Ramm.
46. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
M. Meyyappan.