Time-resolved Spectroscopy of the violet luminescence of undoped AlN
R. Freitag, K. Thonke, R. Sauer, D. G. Ebling, L. Steinke
Universität Ulm, Abteilung Halbleiterphysik, Germany
and
University of Freiburg
This article was received on Wednesday, May 4, 2005 and
accepted on Thursday, September 22, 2005. Abstract
We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN. 