Development of High Power Green Light Emitting Diode Chips
Christian Wetzel, T. Detchprohm
Future Chips Constellation
and
Department of Physics, Applied Physics and Astronomy
This article was received on and
accepted on Thursday, August 18, 2005. Abstract
The
development of high emission power green light emitting diodes chips using
GaInN/GaN multi quantum well heterostructures on sapphire substrate in our
group is being reviewed. We analyze the electronic bandstructure in highly
polarized GaInN/GaN quantum wells to identify the appropriate device
structures. We describe the optimization of the epitaxial growth for highest
device performance. Applying several optimization schemes, we find that lateral
smoothness and homogeneity of the active region as characterized by atomic
force microscopy is a most telling character of high yield, high output power
devices emitting near 525 nm. In un-encapsulated epi-up mounted (400
µm)2 die we achieve 2.5 mW at 20 mA at 525 nm. We describe
die performance, wafer yield, and process stability, and reproducibility for
our production-scale implementation of this green LED die process.Outline
Linked Pages
Cite this article as: MRS Internet J. Nitride Semicond. Res. 10, 2(2005).
last updated Friday, September 9, 2005 5:39:05 PM.© 2005 The Materials Research Society
