M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam
Department of Materials Science and Engineering, North Carolina State University
N. Parikh
University of North Carolina at Chapel Hill
Department of Physics and Astronomy
D. E. Aspnes
Department of Physics, North Carolina State University
Robert F. Davis
Department of Materials Science and Engineering, North Carolina State University
x
0.96) having smooth surfaces were deposited directly on both vicinal and
on-axis 6H-SiC(0001) substrates. Cross-sectional TEM of
Al0.13Ga0.87N revealed stacking faults near the
SiC/Nitride alloy interface and numerous threading dislocations. EDX, AES and
RBS were used to determine the compositions, which were paired with their
respective CL near band-edge emission energies. A negative bowing parameter
was determined. The CL emission energies were similar to the bandgap energies
obtained by SE. FE-AES of the initial growth of
Al0.2Ga0.8N revealed an aluminum rich layer near the
interface. N-type (silicon) doping was achieved for
AlxGa1-xN for 0.12 x 0.42.
Al0.2Ga0.8N/GaN superlattices were fabricated with
coherent interfaces. Additionally, HEMT structures using an AlN/GaN/AlN buffer
structure were fabricated.© 1996-2005 The Materials Research Society