The Morphology and Cathodoluminescence of GaN Thin Films


Carol Trager-Cowan , P. G. Middleton, K. P. O'Donnell
Department of Physics and Applied Physics, University of Strathclyde

This article was received on Friday, May 31, 1996 and accepted on Thursday, September 5, 1996.

Abstract

In this paper we compare gallium nitride (GaN) films grown by molecular beam epitaxy on sapphire (Al2O3), gallium arsenide (GaAs (111)B) and lithium gallate (LiGaO2) substrates. Atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and cathodoluminescence spectroscopy are used to characterise the films. From growth runs carried out to date, GaN films on GaAs substrates exhibit the best surface uniformity and the cleanest luminescence.

Outline

  • Introduction
  • Sample Growth
  • Experimental Techniques
  • Atomic Force Microscopy
  • Scanning Electron Microscopy and Cathodoluminescence Imaging
  • Cathodoluminescence Spectroscopy
  • Results
  • Atomic Force Micrographs
  • Scanning electron microscopy and cathodoluminescence imaging
  • Cathodoluminescence Spectroscopy
  • GaN/Al2O3
  • GaN/LiGaO2
  • GaN/GaAs (111)B
  • Summary
  • Acknowledgments

    • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 6(1996).

    last updated Wednesday, October 14, 1998 7:24:26 PM.

    © 1996-1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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