The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
Alexey V. Dmitriev, Alexander L. Oruzheinikov
M.V.Lomonosov Moscow State University
This article was received on Monday, June 3, 1996 and
accepted on Monday, December 30, 1996. Abstract
The radiative recombination rates have been calculated for the first
time in the wide band gap wurtzite semiconductors GaN, InN and AlN and their
solid solutions
GaxAl1-xN
and
InxAl1-xN
on the base of existing data on the energy band structure and optical
absorption in these materials. We calculated the interband matrix elements for
the direct optical transitions between the conductivity band and the valence
one using the experimental photon energy dependence of the absorption
coefficient near the band edge. In our calculations we assumed that the
material parameters of the solid solutions (the interband matrix element,
carrier effective masses and so on) could be obtained by a linear interpolation
between their values in the alloy components. The temperature dependence of the
energy gap was taken in the form proposed by Varshni. The calculations of the
radiative recombination rates were performed in the wide range of temperature
and alloy compositions.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 46(1996).
last updated Monday, November 9, 1998 12:42:32 PM.© 1996-1998 The Materials Research Society
