MIJ-NSR Vol. 1, Art. 45, A.E. Nikolaev et al.

GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

A.E. Nikolaev, Yu.V. Melnik, M.N. Blashenkov, N.I. Kuznetsov, I.P. Nikitina, A.S. Zubrilov, D.V. Tsvetkov
Cree Research EED
and
Ioffe Physical-Technical Institute

V. I. Nikolaev, V.A. Dmitriev, V.A. Soloviev
Ioffe Physical-Technical Institute

This article was received on June 2, 1996 and accepted on December 19, 1996.

Abstract

Gallium nitride films were successfully grown by HVPE technique on p-type 6H-SiC substrate. The layers exhibit high crystal quality as was determined by X-ray diffraction. Photoluminescence (PL) of these films was measured. The PL spectra were dominated by band edge emission. Concentration N_d-N_a in undoped epitaxial layers ranged from 2x10¹⁷ to 1x10¹⁹cm^-3. Mesa-structures formed by reactive ion etching showed good rectifying current-voltage characteristics for GaN/SiC pn heterojunctions.