Growth and Properties of InGaN and AlInGaN Thin Films on (0001)
Sapphire
E. L. Piner
missing record for mat.mte.ncsu.edu
F. G. McIntosh, J. C. Roberts, M. E. Aumer, V. A. Joshkin, S. M. Bedair
Electrical and Computer Engineering Department, North Carolina State University
N. A. El-Masry
missing record for mat.mte.ncsu.edu
This article was received on June 11, 1996 and
accepted on December 17, 1996. Abstract
High quality InGaN films have led to the development of LEDs and
blue lasers. The quaternary AlInGaN however, represents a more versatile
material since the bandgap and lattice constant can be independently varied.
We report on such films grown on (0001) sapphire substrates in an atmospheric
pressure MOCVD reactor at 750-800°C. The ternary films have a
composition of up to 40% InN and the quaternary films were grown in the
composition range of 0 to 20% AlN and 0 to 20% InN. The quaternary
compositions studied by EDS and the lattice constants from double crystal XRD
followed Vegard's law indicating solid solubility for the range studied.
Room temperature PL is dominated by band edge emission for InGaN and AlInGaN,
at low AlN%. Higher AlN alloys of AlInGaN had PL dominated by deep levels.
AlInGaN/InGaN and AlGaN/InGaN heterostructures were grown with abrupt
interfaces. We emphasize the most important growth parameters for the growth
of high quality ternary and quaternary thin films. The structural, electrical
and optical properties of these In-based ternary and quaternary films and their
lattice matched and strained heterostructures will also be presented.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 43(1996).
last updated January 9, 1998 1:02:42 PM.© 1996-1998 The Materials Research Society
