Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC


Philippe Vermaut , P. Ruterana, G. Nouet
Laboratoire d'etude et de recherche sur les materiaux, CNRS

A. Salvador, H. Morkoç
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign

This article was received on Tuesday, June 11, 1996 and accepted on Tuesday, December 17, 1996.

Abstract

In N-rich growth conditions, prismatic domains were formed in the initial stage of a cyclotron assisted MBE of GaN over 6H-SiC (0001). They exhibit {10(-1)0} facets and are either voids or amorphous phase. Their density is of a few 109 cm-2 and they are located in a 50 nm layer closest to the substrate surface.

Outline

  • Introduction
  • Experimental details
  • Results
  • Discussion and conclusion

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    Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 42(1996).

    last updated Thursday, August 13, 1998 3:05:45 PM.

    © 1996-1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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