Determination of the dislocation densities in GaN on c-oriented
sapphire
A. Pelzmann, M. Mayer, C. Kirchner, D. Sowada, T. Rotter, Markus Kamp , K. J. Ebeling
Abteilung Optoelektronik, Universität Ulm
S. Christiansen, M. Albrecht, H. P. Strunk
Institut für Werkstoffwissenschaften, Lehrstuhl VII, Universität Erlangen-Nürnberg
B. Holländer, S. Mantl
Forschungszentrum Jülich, Inst. für Schicht-und Ionentechnik
This article was received on July 31, 1996 and
accepted on December 16, 1996. Abstract
We report on a comprehensive study of the defect structure in GaN
grown on c-oriented sapphire by gas source molecular beam epitaxy and metal
organic vapour phase epitaxy. Transmission electron microscopy is used to
investigate the defect structures which are dominated by threading dislocations
perpendicular to the sapphire surface and stacking faults. Additionally,
dislocation densities are determined. For determination of dislocation
densities by x-ray diffraction we employ a model that uses the linewidth of
x-ray rocking curves for this purpose. Finally, Rutherford backscattering
spectrometry is performed to complement the structural investigation.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 40(1996).
last updated October 29, 1997 5:20:45 PM.© 1996-1997 The Materials Research Society
