Research on GaN MODFET's
L. Eastman, J. Burm, W. Schaff, M. Murphy, K. Chu
Dept. Electrical Engineering, Cornell University
H. Amano, I. Akasaki
Department of Electrical and Electronic Engineering, Meijo University
This article was received on June 3, 1996 and
accepted on August 12, 1996. Abstract
Initial results on 0.25 µm gate MODFET's have yielded
ft=21.4 GHz and fmax=77.5 GHz. These devices have
characteristics that agree with the gradual channel model dominated by the
electron mobility. The AlGaN/GaN structure, grown on sapphire substrates, are
polycrystalline, and thus yield low mobility (<100cm2/Vs) at low
electron sheet density. Using a simple model, design optimization predicts
electron sheet density values of 7.3
1012
cm-2 in thin, 3 nm quantum wells for single-sided doping with 5 nm
spacer for use in future high frequency
Al0.4Ga0.6N/In0.25Ga0.75N/GaN
MODFET's with gate lengths of 0.10 µm. Double sided doping with 5 nm
spacers would yield a sheet density of 1.4
1013cm-2
in such 3 nm quantum wells.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 4(1996).
last updated October 30, 1997 2:08:39 PM.© 1996-1997 The Materials Research Society
