Figures

Figure 1

Schematic structure of heterobipolar transistor


Figure 2

Energy band diagram for biased transistor showing a barrier that blocks the escape of holes from base to emitter


(click for full image)

Figure 3

Cross sectional view of GaN/SiC heterojunction bipolar transistor


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Figure 4

Scanning electron microscopy image of and small transistors on a chip


Figure 5

Common base characteristics at room temperature as the emitter current increases in 10 mA steps from 0 to 100 mA.


(click for full image)

Figure 6

High temperature measurement setup.


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Figure 7

Common base I-V characteristics at 520


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Figure 8

Current gain versus emitter current at indicated temperatures.


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Figure 9

Current gain as a function of temperature.


(click for full image)

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last updated Thursday, February 22, 2001 1:08:54 PM.

© 1996-2001 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research