Schematic structure of heterobipolar transistor
Energy band diagram for biased transistor showing a barrier that blocks the escape of holes from base to emitter
Cross sectional view of GaN/SiC heterojunction bipolar transistor
Scanning electron microscopy image of and small transistors on a chip
Common base characteristics at room temperature as the emitter current increases in 10 mA steps from 0 to 100 mA.
High temperature measurement setup.
Common base I-V characteristics at 520
Current gain versus emitter current at indicated temperatures.
Current gain as a function of temperature.