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[1]J. Pankove, S. S. Chang, H. C. Lee, R. Molnar, T. D. Moustakas, B. Van Zeghbroeck. , "High-Temperature GaN/SiC Heterojunction Bipolar Transistor with High Gain", Proc. IEDM. , San Francisco, CA. Dec. , 389 (1994) [text citation]

[2]S. S. Chang, J. Pankove, M. Leksono, B. Van Zeghbroeck, "500C Operation of a GaN/SiC Heterojunction Bipolar Transistor", Device Research Conference, paper IVB-5, Charlottesville, VA, June (1995) [text citation]

References Citing this Article

[1] Vincent Vezin, Satoshi Yatagai, Hiroyuki Shiraki, Satoshi Uda, Jpn. J. Appl. Phys. 36, L1483-L1485 (1997).

[2] Fan Ren , Cammy R. Abernathy , J. M. Van Hove, P. P. Chow, R. Hickman, J. J. Klaassen, R. F. Kopf, Hyun Cho, K. B. Jung, J. R. La Roche, R. G. Wilson, J. Han, R. J. Shul, A. G. Baca, S.J. Pearton, MRS Internet J. Nitride Semicond. Res. 3, 41 (1998).

[3] John T Torvik , M. Leksono, J. I. Pankove, B. Van Zeghbroeck, MRS Internet J. Nitride Semicond. Res. 4, 3 (1999).

[4] S.J. Pearton, R. J. Shul, Fan Ren , MRS Internet J. Nitride Semicond. Res. 5, 11 (2000).

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