Fabrication of GaN mesa structures


K.V. Vassilevski
Cree Research EED

M.G. Rastegaeva
Ioffe Physical-Technical Institute

A.I. Babanin, I.P. Nikitina, V.A. Dmitriev
Cree Research EED
and
Ioffe Physical-Technical Institute

This article was received on May 31, 1996 and accepted on November 22, 1996.

Abstract

We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity Rc ~2x10-5 Omegaxcm2 and Ni ohmic contacts for p-doped GaN with Rc ~ 4x10-2 Omegaxcm2 were formed. Both types of contacts were used as masks for GaN reactive ion etching (RIE) in a CCl2F2/Ar gas mixture. Maximum etch rates of ~ 40 nm/min were obtained. Mesa structures up to 3 µm in height were formed.

Outline

  • Introduction
  • Ti/Ni ohmic contacts on n-doped GaN
  • Sample preparation and measurement techniques
  • Experimental results
  • RIE of GaN
  • Ni mask as a contact to p-GaN
  • Conclusion
  • Acknowledgments

    • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 38(1996).

    last updated October 29, 1997 4:05:41 PM.

    © 1996-1997 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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