Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells
Jin Seo Im, Volker Härle, Ferdinand Scholz, Andreas Hangleiter
4. Physikalisches Institut, Universität Stuttgart
This article was received on June 2, 1996 and
accepted on November 20, 1996. Abstract
We have studied GaInN/GaN quantum well structures grown by LP-MOVPE
by picosecond time-resolved photoluminescence spectroscopy. For the quantum
wells we find rather long PL decay times of up to 600 ps at low temperature. At
temperatures higher than about 100 K, the decay time decreases rapidly,
reaching about 75 ps at room temperature. From measurements of the integrated
PL intensity, we conclude that this decrease of the decay time is due to
nonradiative recombination processes. By combining our data for the lifetime
and the intensity, we derive the radiative lifetime, which is constant at low
temperature and increases at elevated temperatures. We explain this behavior on
the basis of the interface roughness at low temperature and thermal
dissociation of excitons at higher temperatures.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 37(1996).
last updated October 28, 1997 4:09:51 PM.© 1996-1997 The Materials Research Society
