Figures

Figure 1

Hall mobility (top) and electron concentration (bottom) as a function of aluminum fraction x for samples of the A (open points) and B(solid points) series.

Figure 2

Measured pinning trap level for type A (triangles) and B(circles) samples. The reference level is the valence band. Also shown are the conduction band edge and the extrapolated position of the T2 level assuming it is pinned to the vacuum level.

Figure 3

Squared absorption coefficient (2) as a function of photon energy for various samples of series A (top) and B(bottom).

Figure 4

SIMS profiles of Si in as-implanted Al0.12Ga0.88N and after annealing at 1140 °C.

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