Optical Properties of Nitride-based Structures Grown on 6H-SiC
D.V. Tsvetkov, A.S. Zubrilov
Cree Research EED
and
Ioffe Physical-Technical Institute
V. I. Nikolaev, V.A. Soloviev, V.A. Dmitriev
Ioffe Physical-Technical Institute
This article was received on Friday, May 31, 1996 and
accepted on Tuesday, November 12, 1996. Abstract
The luminescent properties of AlGaN epitaxial layers with AlN mole
fractions up to 30% and various types of AlGaN/GaN-based heterostructures have
been studied. The structures were grown on 6H-SiC substrates by MOCVD. The
structures' cathodoluminescence and electroluminescence were measured. A
"blue" shift of the edge luminescent peak position for AlGaN alloys
was measured to be a non-linear function on the AlN mole fraction. For
p-AlGaN/n-GaN double heterostructures (DH), the edge peak position was detected
at 365 nm (300K). For a
p-Al0.05Ga0.95N/n-Al0.03Ga0.97N
heterostructure, the electroluminescent edge peak was observed at 355 nm
(300K). The effects of temperature and forward current on the edge
electroluminescence of theAlGaN/GaN DH's were investigated.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 35(1996).
last updated Wednesday, August 12, 1998 1:32:07 AM.© 1996-1998 The Materials Research Society
