In-depth Analysis of the Impurities in GaN
A. P. Kovarsky, V. S. Strykanov
Surface Diagnostics Lab., Mekhanobr-Analyt Co.
This article was received on June 2, 1996 and
accepted on November 12, 1996. Abstract
GaN epitaxial films were analyzed by Secondary Ion Mass Spectrometry
(SIMS). Standard implanted samples were used to determine the appropriate
analytical conditions for analysis of impurities. The dose and energy of
implantation for selected elements (Mg, Al, Si, Zn, Cd, H, C and O) were chosen
so the maximum impurity concentration was not more than 1020
atoms/cm3. The optimum analysis conditions were ascertained from the
standards for each element, and the detection limits were deduced from the
background levels of the implantation profiles. We demonstate that lower
detection limits of 1015 atoms/cm3 with a dynamic range
103 - 105 are possible. Zn and Cd have low ion yields, so
the minimum detection level for these elements is the background level of the
detector. The detection limits of the other elements are determined by the
contamination of an initial GaN matrix.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 34(1996).
last updated October 28, 1997 2:29:36 PM.© 1996-1997 The Materials Research Society
