Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces
by a modified MBE method
T. S. Cheng, C. T. Foxon, N. J. Jeffs, O. H. Hughes
Department of Physics, University of Nottingham
B. G. Ren
Department of Physics, University of Nottingham
and
Philips Analytical X-ray B. V.
Y. Xin, P. D. Brown, C. J. Humphreys
Department of Materials Science and Metallurgy, University of Cambridge
A. V. Andranov, D. E. Lacklison, J. W. Orton
Department of Electrical and Electronic Engineering, University of Nottingham
M. Halliwell
Philips Analytical X-ray B. V.
This article was received on Monday, June 3, 1996 and
accepted on Monday, November 4, 1996. Abstract
Films of GaN have been grown using a modified MBE method in which
the active nitrogen is supplied from an RF activated plasma source. Wurtzite
films grown on (0 0 1) oriented GaAs substrates show highly
defective, ordered polycrystalline growth with a columnar structure; the
(0 0 0 1) planes of the layers being parallel to the
(0 0 1) planes of the GaAs substrate. Films grown using a coincident
As flux, however, have a single crystal zinc-blende growth mode. They have
better structural and optical properties. To improve the properties of the
wurtzite films we have studied the growth of such films on (1 1 1)A
and (1 1 1)B oriented GaAs substrates. The improved structural
properties of such films, assessed using x-ray and TEM methods, correlate with
better low temperature PL performance.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 32(1996).
last updated Thursday, September 17, 1998 6:29:49 PM.© 1996-1998 The Materials Research Society
