Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth
by Molecular Beam Epitaxy
M. V. Averyanova
Russian Research Center "Applied Chemistry"
S. Yu. Karpov
Advanced Technology Center
Yu. N. Makarov
Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg
I. N. Przhevalskii
Russian Research Center "Applied Chemistry"
M. S. Ramm, R. A. Talalaev
Ioffe Physical-Technical Institute
This article was received on Monday, May 27, 1996 and
accepted on Thursday, October 31, 1996. Abstract
A theoretical model which accounts for a physisorption precursor of
molecular nitrogen is proposed for the analysis of group III-nitride growth by
molecular beam epitaxy (MBE). The kinetics of nitrogen evaporation are found to
be an essential factor influencing the MBE growth process of group
III-nitrides. The high thermal stability of nitrides is explained to be related
to the desorption kinetics resulting in a low value of the evaporation
coefficient. The values of the evaporation coefficients as functions of
temperature are extracted from the experimental Langmuir evaporation data of
GaN and AlN. Using the revised thermodynamic properties of the group
III-nitrides, and the obtained values of the evaporation coefficient, the
process parameter dependent growth rate and transition to extra liquid phase
formation during the GaN MBE are calculated. The theoretical results are
compared to the available experimental data.Outline
Linked Pages
Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 31(1996).
last updated Saturday, July 24, 1999 3:46:21 PM.© 1996-1999 The Materials Research Society
