Study of GaN films grown by metalorganic chemical vapour deposition
W. Van der Stricht, I. Moerman, P. Demeester
University of Ghent-IMEC, Department of Information Technology
J. A. Crawley, E. J. Thrush
Thomas Swan & Co., Ltd.
This article was received on May 31, 1996 and
accepted on August 5, 1996. Abstract
In this paper GaN films are examined, which are grown on basal plane
(0001) sapphire substrates. Growth is performed in a novel type of vertical
rotating disk reactor. The effects of several growth parameters on the film
quality are discussed. The results on n-type doping of GaN with
SiH
