Temperature distribution in the chamber used for crystal growth of GaN under
high pressure of nitrogen
S. Krukowski
High Pressure Research Center
This article was received on June 4, 1996 and
accepted on October 30, 1996. Abstract
The theoretical analysis of high pressure influence on the conditions of
crystal growth of GaN is presented. High pressure influence on the transport
and equilibrium properties of nitrogen is estimated using scaling approach.
Nitrogen gas properties are used in the finite element calculation of the
thermal conditions in the high pressure chamber. The temperature distribution
during GaN growth in the vertical temperature-gradient configuration is
obtained.
Outline
Linked Pages
Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 27(1996).
last updated October 29, 1997 1:58:21 PM.© 1996-1997 The Materials Research Society
